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DME2829-000 - Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices

Download the DME2829-000 datasheet PDF. This datasheet also covers the DME2851-000 variant, as both devices belong to the same silicon beam-lead schottky mixer diode bondable beam-lead devices family and are provided as variant models within a single manufacturer datasheet.

Description

Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz.

The beam-lead design reduces the problem of bonding to the very small area characteristic of low capacitance junctions.

Features

  • Low 1/f noise.
  • Low intermodulation distortion.
  • Statistical Process Control wafer fabrication Skyworks Green™ products are compliant with all applicable legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number SQ04-0074.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (DME2851-000-Skyworks.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number DME2829-000
Manufacturer Skyworks
File Size 734.17 KB
Description Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices
Datasheet download datasheet DME2829-000 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diode (Singles, Pairs, and Quads) Bondable Beam-Lead Devices Applications  Microwave Integrated Circuits  Mixers  Detectors Features  Low 1/f noise  Low intermodulation distortion  Statistical Process Control wafer fabrication Skyworks Green™ products are compliant with all applicable legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number SQ04-0074. Description Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of low capacitance junctions.
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