Full PDF Text Transcription for DDB2503-220 (Reference)
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DDB2503-220. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET Silicon Schottky Barrier Diodes in Hermetic and Epoxy Ceramic Packages Applications Detectors Mixers Features Available in both P-type and N-type low bar...
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ectors Mixers Features Available in both P-type and N-type low barrier designs Low 1/f noise Packages rated MSL1, 260 C per JEDEC J-STD-020 Description Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characteristics. N-type silicon is also availabl
DDB2503-220 Datasheet
