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DDB2503-000 - Silicon Schottky Barrier Diode Bondable Chips and Beam Leads

General Description

Skyworks beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in the Ka band.

They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction.

Key Features

  • Available in both P-type and N-type low barrier designs.
  • Low 1/f noise.
  • Large bond pad chip design.
  • Planar passivated beam-lead and chip construction.

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Full PDF Text Transcription for DDB2503-000 (Reference)

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DATA SHEET Silicon Schottky Barrier Diode Bondable Chips and Beam Leads Applications  Detectors  Mixers Features  Available in both P-type and N-type low barrier desig...

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ixers Features  Available in both P-type and N-type low barrier designs  Low 1/f noise  Large bond pad chip design  Planar passivated beam-lead and chip construction Description Skyworks beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characterist

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