Silicon Schottky Barrier Diodes in Hermetic and Epoxy
Available in both P-type and N-type low barrier designs
Low 1/f noise
Packages rated MSL1, 260 C per JEDEC J-STD-020
Our packaged Schottky barrier detector diodes are designed for
applications through 20 GHz in the Ka band. They are made by
the deposition of a suitable barrier metal on an epitaxial silicon
substrate to form the junction. The process and choice of
materials result in low series resistance along with a narrow
spread of capacitance values for close impedance control. P-type
silicon is used to obtain superior 1/f noise characteristics. N-type
silicon is also available.
Packaged diodes are suitable for use in waveguide, coaxial, and
The choice of N- and P-type silicon allows the designer to
optimize the silicon material for the intended application:
Doppler mixers and high-sensitivity detectors benefit from using
the low noise characteristics of the P-type silicon.
Low conversion loss mixers and biased detectors can be
designed using standard N-type material.
These diodes are categorized by Tangential Signal Sensitivity
(TSS) for detector applications in four frequency ranges: S, X, Ku,
and Ka bands. However, they can also be used as modulators,
high-speed switches, and low-power limiters.
TSS is a parameter that describes a diode’s detector sensitivity. It
is defined as the amount of signal power, below a one-milliwatt
reference level, required to produce an output pulse with an
amplitude sufficient to raise the noise fluctuations by an amount
equal to the average noise level. TSS is approximately 4 dB above
the minimum detectable signal.
The P-type Schottky diodes in this data sheet are optimized for
low noise in the 1/f region. They require a small forward bias (to
reduce video resistance) if efficient operation is required. The bias
not only increases sensitivity but also reduces parameter variation
due to temperature change. Video impedance is a direct function
of bias and follows the 26/l (mA) relationship. This is important to
pulse fidelity, since the video impedance together with the
detector output capacitance affects the effective amplifier
Bias does, however, increase typical noise, particularly in the 1/f
region. Therefore, it should be kept as low as possible (typically 5
to 50 μA).
Electrical and physical specifications for the silicon Schottky
barrier diodes are provided in Tables 1 through 3. SPICE model
parameters are defined in Table 4. Typical I-V characteristics are
shown in Figures 1 and 2. Typical performance characteristics are
shown in Figures 3 and 4. Typical video detector circuits are
shown in Figure 5.
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203258C • Isolink Proprietary Information • Products and Product Information are Subject to Change Without Notice. • April 18, 2017