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CDF7623-000 Datasheet Preview

CDF7623-000 Datasheet

Silicon Schottky Barrier Diode Bondable Chips and Beam Leads

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DATA SHEET
Silicon Schottky Barrier Diode Bondable Chips and Beam
Leads
Applications
Detectors
Mixers
Features
Available in both P-type and N-type low barrier designs
Low 1/f noise
Large bond pad chip design
Planar passivated beam-lead and chip construction
Description
Skyworks beam-lead and chip Schottky barrier detector diodes
are designed for applications through 40 GHz in the Ka band.
They are made by the deposition of a suitable barrier metal on an
epitaxial silicon substrate to form the junction. The process and
choice of materials result in low series resistance along with a
narrow spread of capacitance values for close impedance control.
P-type silicon is used to obtain superior 1/f noise characteristics.
N-type silicon is also available.
Beam-lead and chip diodes can be mounted on special customer
substrates.
Unmounted beam-lead diodes are especially well suited for use in
microwave integrated circuit (MIC) applications. Mounted beam-
lead diodes can be easily used in MIC, stripline, or other such
circuitry.
These “universal chips” are designed for a high degree of device
reliability in both commercial and industrial uses. The offset bond
pad assures that no mechanical damage occurs at the junction
during the wire bonding. Additionally, the 4 mil bond pad
eliminates performance variation due to bonding, improves
efficiency during manual operations, and is ideal for automated
assembly.
The choice of N- and P-type silicon allows the designer to
optimize the silicon material for the intended application:
Doppler mixers and high-sensitivity detectors benefit from using
the low noise characteristics of the P-type silicon.
Low conversion loss mixers and biased detectors can be
designed using standard N-type material.
Applications
These diodes are categorized by tangential signal sensitivity (TSS)
for detector applications in four frequency ranges: S, X, Ku, and
Ka bands. However, they can also be used as modulators, high-
speed switches, and low-power limiters.
TSS is a parameter that describes a diode’s detector sensitivity. It
is defined as the amount of signal power, below a one-milliwatt
reference level, required to produce an output pulse with an
amplitude sufficient to raise the noise fluctuations by an amount
equal to the average noise level. TSS is approximately 4 dB above
the minimum detectable signal.
The P-type Schottky diodes in this Data Sheet are optimized for
low noise in the 1/f region. They require a small forward bias (to
reduce video resistance) if efficient operation is required. The bias
not only increases sensitivity but also reduces parameter variation
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
200847K • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • June 3, 2019
1




Skyworks

CDF7623-000 Datasheet Preview

CDF7623-000 Datasheet

Silicon Schottky Barrier Diode Bondable Chips and Beam Leads

No Preview Available !

SILICON SCHOTTKY BARRIER DIODES
due to temperature change. Video impedance is a direct function
of bias and follows the 26/l (mA) relationship. This is important to
pulse fidelity, since the video impedance together with the
detector output capacitance affects the effective amplifier
bandwidth.
Bias does, however, increase typical noise, particularly in the 1/f
region. Therefore, it should be kept as low as possible (typically 5
to 50 μA).
Additional bonding and handling methods are contained in the
Skyworks Application Notes, Waffle Pack Chip Carrier
Handling/Opening Procedure (document #200146) and Diode
Chips, Beam-Lead Diodes, Capacitors: Bonding Methods and
Packaging (document #200532).
Electrical and Mechanical Specifications
Electrical and physical specifications for the silicon Schottky
barrier diodes are provided in Tables 1 through 3. SPICE model
parameters are defined in Table 4. Typical performance
characteristics are shown in Figures 1 through 4. Typical video
detector circuits are shown in Figure 5.
Table 1. Electrical Specifications: Beam-Lead P-Type Detector Schottky Diodes1
Electrical Characteristics
Frequency
Band
Part Number
TSS
(dBm) 2
Typ
RV
(Ω)
Min Max
CJ @ 0 V
(pF)
Max
X DDB2503-000
-50
500 700 0.15
Ku DDB2504-000
-48
500
K DDB2265-000
-503
8003
1 Performance is guaranteed only under the conditions listed in this table.
2 Bias = 50 μA
Video bandwidth = 10 MHz.
3 Bias = 30 μA
700
12003
0.10
0.10
VF @ 1 mA
(mV)
200-350
200-350
300-450
VB @ 10 μA
(V)
2
2
3
Test
Frequency
(GHz)
10.00
16.00
24.15
Outline
Drawing
491-006
491-006
491-006
Table 2. Electrical Specifications: P-Type Detector Schottky Diode Universal Chips
Electrical Characteristics
Frequency
RV TSS CJ @ 0 V
(Ω) (dBm) 1 (pF) VF @ 1 mA
Band
Part Number
Barrier
Typ
Min
Max (mV)
Ku CDB7620-000
Low
537
-40
0.15
K CDB7619-000
Low
735
-503 0.10
1 Bias = 50 μA
Video bandwidth = 10 MHz
RV = 2800 Ω
2 Rt is the slope resistance @ 10 mA. The maximum series resistance (Rs) is calculated as: Rs = Rt – 2.8.
3 Bias = 30 μA
250-350
275-375
RT @ 10 mA
(Ω) 2
Max
30
40
VB @ 10 μA
(V)
Min
2
3
Outline
Drawing
571-006
571-006
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
2 June 3, 2019 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • 200847K


Part Number CDF7623-000
Description Silicon Schottky Barrier Diode Bondable Chips and Beam Leads
Maker Skyworks
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