CDF7621-207 Overview
Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control.
CDF7621-207 Key Features
- Available in both P-type and N-type low barrier designs
- Low 1/f noise
- Packages rated MSL1, 260 C per JEDEC J-STD-020