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CDF7621-000 - Silicon Schottky Barrier Diode Bondable Chips and Beam Leads

Download the CDF7621-000 datasheet PDF. This datasheet also covers the CDF7623-000 variant, as both devices belong to the same silicon schottky barrier diode bondable chips and beam leads family and are provided as variant models within a single manufacturer datasheet.

General Description

Skyworks beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in the Ka band.

They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction.

Key Features

  • Available in both P-type and N-type low barrier designs.
  • Low 1/f noise.
  • Large bond pad chip design.
  • Planar passivated beam-lead and chip construction.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CDF7623-000-Skyworks.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Skyworks Solutions

Part Number Description
CDF7621-203 Silicon Schottky Barrier Diodes
CDF7621-207 Silicon Schottky Barrier Diodes
CDF7623-000 Silicon Schottky Barrier Diode Bondable Chips and Beam Leads
CDF7623-203 Silicon Schottky Barrier Diodes
CDF7623-207 Silicon Schottky Barrier Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET Silicon Schottky Barrier Diode Bondable Chips and Beam Leads Applications  Detectors  Mixers Features  Available in both P-type and N-type low barrier designs  Low 1/f noise  Large bond pad chip design  Planar passivated beam-lead and chip construction Description Skyworks beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characteristics. N-type silicon is also available.