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HUR3060PT - High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

Key Features

  • International standard package.
  • Planar passivated chips.
  • Very short recovery time.
  • Extremely low switching losses.
  • Low IRM-values.
  • Soft recovery behaviour.

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Datasheet Details

Part number HUR3060PT
Manufacturer Sirectifier Semiconductors
File Size 287.44 KB
Description High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Datasheet download datasheet HUR3060PT Datasheet

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Other Datasheets by Sirectifier Semiconductors

Part Number Description
HUR3060 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
HUR30100 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
HUR30100PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
HUR30120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
HUR30120PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HUR3060PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C(TAB) A C A C A Dimensions TO-247AD Dim. A B C D E F G H J K Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 www.DataSheet4U.com A=Anode, C=Cathode, TAB=Cathode HUR3060PT VRSM V 600 VRRM V 600 L M N Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=140oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=1A; L=180uH VA=1.5.VR typ.