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HUR30100 - High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

Key Features

  • International standard package.
  • Planar passivated chips.
  • Very short recovery time.
  • Extremely low switching losses.
  • Low IRM-values.
  • Soft recovery behaviour.

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Datasheet Details

Part number HUR30100
Manufacturer Sirectifier Semiconductors
File Size 278.40 KB
Description High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Datasheet download datasheet HUR30100 Datasheet

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Other Datasheets by Sirectifier Semiconductors

Part Number Description
HUR30100PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
HUR30120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
HUR30120PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
HUR3020CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
HUR3020CTS High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HUR30100, HUR30120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-247AC A C(TAB) C www.DataSheet4U.com Dim. A B C D E F G H J K L M N C Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 A A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 VRRM V 1000 1200 HUR30100 HUR30120 Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=115oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=11.