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SM3319NSQA Datasheet Preview

SM3319NSQA Datasheet

N-Channel Enhancement Mode MOSFET

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SM3319NSQA/SM3319NSQG
®
N-Channel Enhancement Mode MOSFET
Features
30V/23A,
RDS(ON) = 21m(max.) @ VGS = 10V
RDS(ON) = 30m(max.) @ VGS = 4.5V
Provide Excellent Q x R
gd DS(ON)
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
100% UIS Tested
Pin Description
Top View Bottom View
DDDD
Top View Bottom View
DDDD
SSSG
DFN3x3-8(punch type)
SSSG
DFN3x3-8(saw type)
(5,6,7,8)
DD DD
Applications
(4) G
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
S SS
( 1, 2, 3 )
N-Channel MOSFET
SM3319NS
Assembly Material
Handling Code
Temperature Range
Package Code
SM
SM3319NS QA/QG : 3319
XXXXX
Package Code
QA : DFN3x3-8 (punch type)
QG : DFN3x3-8 (saw type)
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.6 - August, 2014
1
www.sinopowersemi.com




Sinopower

SM3319NSQA Datasheet Preview

SM3319NSQA Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

SM3319NSQA/SM3319NSQG
®
Absolute
Maximum
Ratings
(T
A
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
IDa
ID
a
M
IDc
ISa
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (VGS=10V)
Pulsed Drain Current (VGS=10V)
Continuous Drain Current (VGS=10V)
Diode Continuous Forward Current
TA=25°C
TA=70°C
TC =25°C
TC =70°C
30
±20 V
7
5.6
28
23
A
19
1.5
I
b
AS
Avalanche Current, Single pulse
L=0.1mH
L=0.5mH
13
7
EASb Avalanche Energy, Single pulse
L=0.1mH
L=0.5mH
8.45
12.25
mJ
TJ
TST G
PDa
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
PDc Maximum Power Dissipation
TA=25°C
TA=70°C
TC =25°C
TC =70°C
150
-55 to 150
1.56
1
17.8
11.4
°C
W
Rθ
a
JA
Thermal Resistance-Junction to Ambient
t 10s
Steady State
50
80 °C/W
Rθ
c
JC
Thermal Resistance-Junction to Case
Steady State
7
Note aSurface Mounted on 1in2 pad area, t 10sec.
Note bUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note cThe power dissipation PD is based on TJ(MAX) = 150oC, and it is useful for reducing junction-to-case thermal
resistance (RθJC) when additional heat sink is used.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.6 - August, 2014
2
www.sinopowersemi.com


Part Number SM3319NSQA
Description N-Channel Enhancement Mode MOSFET
Maker Sinopower
Total Page 14 Pages
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