900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Sinopower

SM3116NAU Datasheet Preview

SM3116NAU Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

SM3116NAU
®
N-Channel Enhancement Mode MOSFET
Features
· 30V/60A,
RDS(ON)=5.7mW (Max.) @ VGS=10V
RDS(ON)=9mW (Max.) @ VGS=4.5V
· 100% UIS + Rg Tested
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
· Moisture Sensitivity Level MSL1
(per JEDEC J-STD-020D)
Applications
· Power Management in Desktop Computer or
DC/DC Converters.
Pin Description
D
S
G
Top View of TO-252-2
D
G
S
N-Channel MOSFET
Ordering and Marking Information
SM3116NA
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
U : TO-252-2
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM3116NA U :
SM3116NA
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor Inc.
Rev. A.10 - May, 2019
1
www.sinopowersemi.com




Sinopower

SM3116NAU Datasheet Preview

SM3116NAU Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

SM3116NAU
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
V
±20
TJ Maximum Junction Temperature
150 °C
TSTG Storage Temperature Range
-55 to 150
°C
IS Diode Continuous Forward Current
ID Continuous Drain Current
IDM b Pulse Drain Current
TC=25°C
TC=25°C
TC=100°C
TC=25°C
20 A
60 a
A
48
140 A
PD Maximum Power Dissipation
TC=25°C
TC=100°C
50
W
20
RqJC Thermal Resistance-Junction to Case
Steady State
2.5 °C/W
ID Continuous Drain Current
IDM b Pulse Drain Current
TA=25°C
TA=70°C
TA=25°C
15
A
12
60 A
PD Maximum Power Dissipation
TA=25°C
TA=70°C
2.1
W
1.3
RqJA c Thermal Resistance-Junction to Ambient
t £ 10s
Steady State
20
°C/W
60
IAS d Avalanche Current, Single pulse
L=0.5mH
20 A
EAS d Avalanche Energy, Single pulse
L=0.5mH
100 mJ
Note aMax. continuous current is limited by bonding wire.
Note bPulse width is limited by max. junction temperature.
Note cSurface mounted on 1in2 pad area, steady state t = 999s.
Note dUIS tested and pulse width are limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright ã Sinopower Semiconductor Inc.
Rev. A.10 - May, 2019
2
www.sinopowersemi.com


Part Number SM3116NAU
Description N-Channel Enhancement Mode MOSFET
Maker Sinopower
Total Page 11 Pages
PDF Download

SM3116NAU Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SM3116NAF N-Channel MOSFET
Sinopower
2 SM3116NAFP N-Channel MOSFET
Sinopower
3 SM3116NAU N-Channel Enhancement Mode MOSFET
Sinopower





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy