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SM3116NAF Datasheet Preview

SM3116NAF Datasheet

N-Channel Enhancement Mode MOSFET

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SM3116NAF/SM3116NAFP
®
N-Channel Enhancement Mode MOSFET
Features
Pin Description
30V/58A,
RDS(ON)= 5.5m(Max.) @ VGS=10V
RDS(ON)= 7.8m(Max.) @ VGS=4.5V
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
100% UIS + Rg Tested
S
D
G
Top View of TO-220
S
D
G
Top View of TO-220FP
D
Applications
Power Management in Desktop Computer or
DC/DC Converters.
G
Ordering and Marking Information
S
N-Channel MOSFET
SM3116NA
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
F : TO-220
FP : TO-220FP
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM3116NA F/FP : SM3116A
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.3 - March, 2015
1
www.sinopowersemi.com




Sinopower

SM3116NAF Datasheet Preview

SM3116NAF Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

SM3116NAF/SM3116NAFP
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
EAS Avalanche Energy, Single pulse
Note * Current limited by bond wire.
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
L=0.5mH
®
Rating
30
±20
150
-55 to 150
20
200
58*
36
31
12
4
62.5
100
Unit
V
°C
A
W
°C/W
mJ
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
Diode Characteristics
VSD a Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
SM3116NAF/NAFP
Unit
Min. Typ. Max.
VGS=0V, IDS=250µA
VDS=24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=40A
VGS=4.5V, IDS=20A
30
-
-
1.5
-
-
-
- -V
-1
µA
- 30
1.8 2.5 V
- ±100 nA
4.6 5.5
m
6 7.8
ISD=20A, VGS=0V
IDS=40A, dlSD/dt=100A/µs
-
-
-
0.8 1.1 V
21 - ns
13 - nC
Copyright © Sinopower Semiconductor, Inc.
Rev. A.3 - March, 2015
2
www.sinopowersemi.com


Part Number SM3116NAF
Description N-Channel Enhancement Mode MOSFET
Maker Sinopower
Total Page 10 Pages
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