SE80100 mosfet equivalent, n-channel mosfet.
For a single MOSFET
* VDS = 80V
* RDS(ON) = 6.8mΩ @ VGS=10
Pin configurations
See Diagram below
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-.
Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM
* Simple Drive Requirement
* Small Package Outline
* Surface Mount Device
Features
For a single MOSFET
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