XT6N60 mosfet equivalent, 600/650 volts n-channel mosfet.
* RDS(ON) = 1.5Ω @VGS = 10V
* Ultra low gate charge (typical 20 nC )
* Low reverse transfer Capacitance ( CRSS = typical 10pF )
* Fast switching capabilit.
in switching power supplies and adaptors.
* Features
* RDS(ON) = 1.5Ω @VGS = 10V
* Ultra low gate charge (ty.
The XT6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high spee.
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