SSF2715
Overview
SSF2715 is a new generation of high voltage N-Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density. SSF2715 TOP View (TO220).
- Extremely high dv/dt capability Low Gate Charge Qg results in Simple Drive Requirement 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability VDSS = 500V ID = 5A RDS(ON) = 1.2Ω * * *
