SSF2316E Datasheet | Silikron Semiconductor Co

FEATURES - VDS = 20V,ID = 7A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V RDS(ON) < 23mΩ @ VGS=4.5V ESD Rating：2000V HBM - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Schematic diagram Pin Assignment Application - Battery protection - Load switch - Power management DFN3×3-8L BOTTOM VIEW PACKAGE MARKING AND ORDERING INFORMATION Device Marking 2316E Device SSF2316E Device Package DFN3×3-8L Reel Size Tape width Quantity - ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Limit 20 ±12 7 40 1.4 -55 To 150 Unit V V A A W ℃ VDS VGS ID IDM PD TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 83 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Min Typ Max Unit ©Silikron Semiconductor CO.,LTD. 1 http://.silikron. v1.0 .. Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage IDSS IGSS VDS=20V,VGS=0V VGS=±8V,VDS=0V 1 ±10 μA...