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Silikron Semiconductor

SSTS2065 Datasheet Preview

SSTS2065 Datasheet

Schottky Barrier Rectifier

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SSTS2065/SSTS2065F
Main Product Characteristics:
IF
VRRM
Tj(max)
Vf(max)
20A
80V
150
0.7V
Features and Benefits:
„ High Junction Temperature
„ High ESD Protection
„ High Forward & Reverse Surge capability
TO220
SSTS2065
TO220F
SSTS2065F
Schematic Diagram
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol
Characterizes
VRRM
VR(RMS)
IF(AV)
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
Average Forward Current
IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
IRRM Peak Repetitive Reverse Surge Current(Tp=2us)
TJ Maximum operation Junction Temperature Range
Tstg Storage Temperature Range
Value
80
56
20
180
2
-55~150
-55~150
Unit
V
V
A
A
A
Thermal Resistance
Symbol
Characterizes
RθJC
RθJC
Maximum Thermal Resistance Junction To
Case(per leg)
TO220
TO220F
Electrical Characterizes @TA=25unless otherwise specified
Symbol
Characterizes
Min Typ Max Unit
VR Reverse Breakdown Voltage 80
V
0.65
VF Forward Voltage Drop
0.72 V
0.7
IR Leakage Current
0.2
20
mA
Value
2
4
Unit
/W
/W
Test Condition
IR=0.5mA
IF=10A, TJ=25
IF=20A, TJ=25
IF=20A, TJ=125
VR=80V, TJ=25
VR=80V, TJ=125
©Silikron Semiconductor CO., LTD.
 
2011.5.26
www.silikron.com 
Version: 1.0
page 1of6




Silikron Semiconductor

SSTS2065 Datasheet Preview

SSTS2065 Datasheet

Schottky Barrier Rectifier

No Preview Available !

                                                                                 
 
SSTS2065/SSTS2065F
I-V Curves:
Figure 1Typical Forward Characteristics Figure 2Typical Capacitance Characteristics
Figure 3Typical Reverse Characteristics
©Silikron Semiconductor CO., LTD.
 
2011.5.26
www.silikron.com 
Version: 1.0
page 2of6


Part Number SSTS2065
Description Schottky Barrier Rectifier
Maker Silikron Semiconductor
Total Page 6 Pages
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