SSPL6005 transistors equivalent, n-channel enhancement mode power field effect transistors.
TO220
* Advanced Process Technology
* Special designed for PWM, load switching and
general purpose applications
* Ultra low on-resistance with low gate cha.
* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 175℃ operating t.
These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance,.
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