SSF4604 datasheet, mosfet equivalent, Silikron Semiconductor

Features and benefits

*N-Channel VDS = 30V,ID = 6.9A RDS(ON) < 44mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=10V
*P-Channel VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS=-.

Application

GENERAL FEATURES
*N-Channel VDS = 30V,ID = 6.9A RDS(ON) < 44mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=10V
*P-Channel V.

Description

The SSF4604 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. GENERAL FEATURES
*N-Channel VDS = 30V,ID = 6.9A RDS(ON) < 44mΩ @.

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