SSF2610E - MOSFET

Silikron Semiconductor

Datasheet Details

The SSF2610E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V..

VDS = 20V,ID = 8A RDS(ON) < 23mΩ @ VGS=1.8V RDS(ON) < 18mΩ @ VGS=2.5V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating：2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Schematic diagram Marking and pin Assignment Application.
Battery protection.
Load switch.
Power management SOP-8 Top View.

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