SSF2610E mosfet equivalent, mosfet.
* VDS = 20V,ID = 8A RDS(ON) < 23mΩ @ VGS=1.8V RDS(ON) < 18mΩ @ VGS=2.5V RDS(ON) < 14mΩ @ VGS=4.5V
ESD Rating：2000V HBM
* High Power and current handing capability.
that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other ap.
The SSF2610E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
SSF2610E
GENERAL FEATURES
* VDS = 20V,ID = 8A RDS(ON) < 23mΩ @ VGS=1.8V RDS(ON) < 18mΩ @ VGS=2.5V RDS(ON.
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