Datasheet4U Logo Datasheet4U.com

SSBD10L100CTF - Schottky Barrier Rectifier

Download the SSBD10L100CTF datasheet PDF. This datasheet also covers the SSBD10L100CT variant, as both devices belong to the same schottky barrier rectifier family and are provided as variant models within a single manufacturer datasheet.

General Description

Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability Absolute Rating: Symbol Characterizes VRRM Peak Repetitive Reverse Voltage VR(RMS) IF(AV) RMS Rev

Key Features

  • High Junction Temperature.
  • High ESD Protection.
  • High Forward & Reverse Surge capability TO220F SSBD10L100CTF Schematic Diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSBD10L100CT-SilikronSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSBD10L100CTF
Manufacturer Silikron Semiconductor
File Size 442.74 KB
Description Schottky Barrier Rectifier
Datasheet download datasheet SSBD10L100CTF Datasheet

Other Datasheets by Silikron Semiconductor

Part Number Description
SSBD10L100CT Schottky Barrier Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSBD10L100CT/CTF Main Product Characteristics: IF VRRM Tj(max) Vf(max) 2×5A 100V 150℃ 0.7V TO220 SSBD10L100CT Features and Benefits:  High Junction Temperature  High ESD Protection  High Forward & Reverse Surge capability TO220F SSBD10L100CTF Schematic Diagram Description: Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability Absolute Rating: Symbol Characterizes VRRM Peak Repetitive Reverse Voltage VR(RMS) IF(AV) RMS Reverse Voltage Average Forward Current Per diode Per device IFSM Non Repetitive Surge Forward Current(tp=8.