2N7002KB datasheet, mosfet equivalent, Silikron Semiconductor

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datasheet Download (Size : 480.76KB)

Features and benefits

* Advanced MOSFET process technology
* Special designed for PWM, load switching and general purpose applications
* Ultra low on-resistance with low gate cha.

Application

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* ESD Rating：1000V.

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power.

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