* Advanced trench MOSFET process technology
* Special designed for PWM, load switching and general purpose applications
* Ultra low on-resistance with low g.

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 175℃ operating t.

It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve extremely low on resistance, fast switching speed and short reverse recovery time. These features combine to make this design an extremely efficient an.

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