TO220 
* Advanced MOSFET process technology
* Special designed for motor control, PWM, load switching etc.
* Ultra low on-resistance with low gate charge <.

  Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Cont.

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power.

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