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* Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with l.

Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature Descri.

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power.

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