andBenefits:
* Advanced trench MOSFET process technology
* Special designed for PWM, load switching and general purpose applications
* Ultra low on-resistance.

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 150℃ operating t.

It utilizes the latest trench processing techniquesto achieve the high cell density and reduces the on-resistance with high repetitiveavalanche rating. These features combine to makethis design an extremely efficient and reliable devicefor use in po.

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