* Advanced trench MOSFET process technology
* Special designed for PWM, load switching and general purpose applications
* Ultra low on-resistance with low g.

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 175℃ operating t.

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use i.

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