SMS010N04A1 Datasheet | Silikron

Features and Benefits: - Advanced MOSFET process technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 150℃ operating temperature Schematic Diagram Description : It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. 127 90 508 214 100 ± 20 -55 to +150 Units W V V °C ©Silikron Microelectronics (Suzhou) Co.,Ltd .silikron. Version : 1.0P page 1 of 5 Thermal Resistance Symbol RθJC Characteristics Junction-to-case ③ Typ. - Max. 0.7 Units ℃/W Electrical Characteristics @TA=25℃unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Tj=25°C IGSS Gate-to-Source forward leakage gfs Transconductance Qg Total gate charge Qgs Gate-to-Source charge Qgd Gate-to-Drain("Miller") charge td(on) Turn-on delay time tr Rise time...