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VN10LM - N-Channel Enhancement-Mode MOS Transistors

Download the VN10LM datasheet PDF. This datasheet also covers the VN10LE variant, as both devices belong to the same n-channel enhancement-mode mos transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (VN10LE-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VN10LM
Manufacturer Siliconix
File Size 101.82 KB
Description N-Channel Enhancement-Mode MOS Transistors
Datasheet download datasheet VN10LM Datasheet

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Other Datasheets by Siliconix

Part Number Description
VN10LE N-Channel Enhancement-Mode MOS Transistors
VN100D (VN1xxD) MOSPOWER
VN100x (VN1xxD) MOSPOWER
VN10KE N-Channel Enhancement-Mode MOS Transistors
VN10KM N-Channel Enhancement-Mode MOS Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
..L:IrISiinlciocrpoorna.itexd VN0610LL, VN10LE, VN10LM N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (n) (A) PACKAGE TO-206AC (TO-52) BOTTOM VIEW VN0610LL 60 5 0.28 TO-92 VN10LE 60 5 0.38 TO-206AC VN10LM 60 5 0.32 TO-237 Performance Curves: VNDS06 (See Section 7) TO-237 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN & CASE TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 & TAB - DRAIN 1 SOURCE 2 GATE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL VN0610LL VN10LE 2 VN10LM UNITS Drain-Source Voltage Gate-Source Voltage Vos 60 60 60 V Vas ±30 ±20 ±30 Continuous Drain Current Pulsed Drain Current 1 TA= 25°C 10 TA = 100°C 10M 0.28 0.17 1.3 0.38 0.24 1 0.32 0.2 A 1.
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