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SD2110 - n-channel dual enhancement mode lateral D-MOS FET

Features

  • High Figure-of-Merit gfs/C.
  • Ultra Low Feedback Capacitance 0.3 pF.
  • Low Output Capacitance.
  • Low Input (Gate) Leakage.
  • Non-Critical Operating CurrentNoltage.
  • Matched Characteristics.

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Datasheet Details

Part number SD2110
Manufacturer Siliconix
File Size 80.93 KB
Description n-channel dual enhancement mode lateral D-MOS FET
Datasheet download datasheet SD2110 Datasheet
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Full PDF Text Transcription

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n-channel dual enhancement mode -o lateral D-MOS FETs c::4 designed lor. · · Q CI) • Wideband DiHerential Amplifiers • Cascode High Slew Rate Amplifiers • Single Ended High-Speed Amps • High-Speed Analog Comparators • Sample & Hold Ckts • High-Speed Matched Analog Switches H Silicanix FEATURES • High Figure-of-Merit gfs/C • Ultra Low Feedback Capacitance 0.3 pF • Low Output Capacitance • Low Input (Gate) Leakage • Non-Critical Operating CurrentNoltage • Matched Characteristics BENEFITS • High Frequency Performance • High Slew Rate • High Speed Switching • Tight Temperature Tracking ABSOLUTE MAXIMUM RATINGS (25°C) Drain-to-Drain Voltage ....................... ±25V Drain-Source Voltage ........................ +25V Drain Current ..............................
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