2N5163 Datasheet | Siliconix

- n-channel JFET ." C"4 designed for - - - - Low and Medium Frequency Amplifiers BENEFITS - Low Cost - ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain or Gate-Source Voltage __ -25 V Gate Current 10 m A Total Device Dissipation (25°C Free Air Temperature) 350 m W Power Derating (to +125°C) 3.5 m W;o C Storage Temperature Range -55 to +125°C Operating Temperature Range -55 to +125°C Lead Temperature (1/16" from case for 10 seconds) 300°C TO-I06 See Section 5 G~: EJo 0210 S BOTTOM VIEW ~R - ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristic I--.! S IGSS 1...2 T J I~ A BVGSS I~ VGSloff) 1----= C VGS G l OSS I""": rds{onl S 9f, 1I~ D 90S y 10 N 9f5 I-A I~ M Ciss I 12 C Crss 1I~ NF 14 e N Gate Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Saturation Drain Current Drain-Source ON Resistance mon-Source Forward Transconductance mon-Source Output Conductance mon-Source Forward Transconductance mon-Source Input Capacitance mon-Source Reverse Transfer Capacitance mon~Source Spot Noise Figure Equivalent Short Circuit Input Noise Voltage Min -25 --{j.4 Max -10 --{j.G -S.O -7.5 40...