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54ACT3301 Datasheet Preview

54ACT3301 Datasheet

Monolithic crystal controlled CMOS oscillator

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  CMOS Clock Generator – 54ACT3301
 
Monolith  ic crystal controlled CMOS oscillator in bare die form
Descrip  tion
Features:
Rev 1.0
07/06/18
The 54ACT 3301 is a crystal controlled CMOS
oscillator requiring a minimum of external components
and is desig  ned for Clock Generation and Support
applications up to 110 MHz. The device is highly
versatile, p roviding selectable output divide ratios,
multiple crystal drive levels and selectable rise and fall
timing optio ns. The circuit is designed to operate over
a wide frequency range using fundamental model or
overtone cr ystals. The device is a direct electrical and
mechanical replacement for the obsolete 54ACT3301
produced b y National Semiconductor.
 
Orderin  g Information
The following part suffixes apply:
 
ƒ No suffix - MIL-STD-883 /2010B Visual Inspection
 
ƒ H” - MIL-STD-883 /2010B Visual Inspection
  + MIL-PRF-38534 Class H LAT
ƒ Crystal frequency operation range:
ƒ fundamental: 10 MHz to 100 MHz typical
ƒ 3rd or 5th overtone: 10 MHz to 85 MHz
ƒ Programmable oscillator drive
ƒ Selectable fast output edge rates
ƒ Output symmetry circuit to adjust 50% duty cycle
point between CMOS and TTL levels
ƒ Output current drive of 48 mA for IOL/IOH
ƒ Output has high speed short circuit protection
ƒ Basic oscillator type: Pierce
Die Dimensions in µm (mils)
1575 (62)
ƒ K” - M IL-STD-883 /2010A Visual Inspection (Space)
+ MIL-PRF-38534 Class K LAT
LAT = Lot  Acceptance Test.
For further information on LAT process flows see below.
www.silico nsupplies.com\quality\bare-die-lot-qualification
Supply  Formats:
 
ƒ Default – Die in Waffle Pack (100 per tray capacity)
 
ƒ Sawn Wafer on Tape – On request
ƒ Unsaw n Wafer – On request
ƒ Die Thi ckness <> 460µm(18 Mils) – On request
ƒ Assem bled into Ceramic Package – On request
Mechanical Specification
Die Size (Unsawn)
Minimum Bond Pad Size
Die Thickness
Top Metal Composition
Back Metal Composition
1575 x 1575
62 x 62
µm
mils
100 x 100
4x4
µm
mils
460 (±10)
18.11 (±0.39)
µm
mils
Al 1%Si 1.1µm
N/A – Bare Si
Page 1 of 10 
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54ACT3301 Datasheet Preview

54ACT3301 Datasheet

Monolithic crystal controlled CMOS oscillator

No Preview Available !

   CMOS Clock Generator – 54ACT3301
d 
Pad La  yout and Functions
 
2  1
18  17  16 15 
3 
DIE ID
14
4  
  0,0
5 
 
13
12
6 
 7
8
11
9 10
 
1575µm (62 mils)
 
Truth Tables
 
DIVISION S ELECTION
DIVB
DIVA
OEL
V½   0 / F
1 0/F
0   0/F
X
0
0
V½   1
11
0
0
0  1
0
OEH
X
1
1
1 
1
1
X  X
1X
X  X
X0
  
DRIVE SELECTION
 
OSC_DR OSC_OUT DRIVE
0 
1
V½  
Low
Medium
High
 
DIVIDER OUTPUT
Divide-by 1
Divide-by 2
Divide-by 4
Divide-by 8
Divide-by 16
Divide-by 32
Output Reset High
at Re-enable
Output Reset High
at Re-enable
INPUT LEVEL
1 High voltage
0 Low voltage
V½ VCC/2
F Floating
X Irrelevant
Rev 1.0
07/06/18
PAD FUNCTION COORDINATES (µm)
XY
1 OSC_OUT
-436
630
2 NOT USED
-639
639
3 XTAL - 5
-624
429
4 XTAL - 10
-624
135
5 OEL
-626
-124
6 OEH
-626
-394
7 OSCLO_1
-493
-637
8 GND
-178
-637
9 OUT
142 -637
10 VCC
11 TRF
421 -637
631 -466
12 DIVA
631 -125
13 OSC_DR
631
155
14 DIVB 631 421
15 OSCLO_2
419
631
16 GNDQ
199
630
17 OSC_IN
9
630
18 XTAL – 20
-167
630
CHIP BACK POTENTIAL IS FLOATING
RISE AND FALL TIME SELECTION
OSC_DR DIV
RISE /
TRF FALL TIME
(ns)
V½
V½
V½
V½
0/1
N 0/F
N1
Y 0/F
Y1
X 0/F
2
<2
4
2
4
0/1 X
1
2
 
Page 2 of 10 
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Part Number 54ACT3301
Description Monolithic crystal controlled CMOS oscillator
Maker Silicon Supplies
Total Page 10 Pages
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