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SSM9971GD - Dual N-channel Enhancement-mode Power MOSFETs

General Description

The SSM9971GD acheives fast switching performance with low gate charge without a complex drive circuit.

It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits.

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Datasheet Details

Part number SSM9971GD
Manufacturer Silicon Standard
File Size 532.59 KB
Description Dual N-channel Enhancement-mode Power MOSFETs
Datasheet download datasheet SSM9971GD Datasheet

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SSM9971GD Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM9971GD acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM2310GD is supplied in an RoHS-compliant PDIP-8 package, which is widely used for medium power commercial and industrial applications, where throughhole insertion into the board is required. 60V 50mΩ 5A Pb-free; RoHS-compliant SO-8 D2 D2 D1 D1 G2 PDIP-8 S1 S2 G1 ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current 1,2 3 3 , Value 60 ± 25 T A = 25°C TA = 70°C 5 3.