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SSM9918J - N-Channel Enhancement Modt

Download the SSM9918J datasheet PDF. This datasheet also covers the SSM9918H variant, as both devices belong to the same n-channel enhancement modt family and are provided as variant models within a single manufacturer datasheet.

General Description

Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSM9918H_SiliconStandard.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSM9918J
Manufacturer Silicon Standard
File Size 544.06 KB
Description N-Channel Enhancement Modt
Datasheet download datasheet SSM9918J Datasheet

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Other Datasheets by Silicon Standard

Part Number Description
SSM9918H N-Channel Enhancement Modt
SSM9915H N-Channel Enhancement-Mode Power MOSFET
SSM9915J N-CHANNEL ENHANCEMENT MODE POWER MOSFET
SSM9915K N-channel Enhancement-mode Power MOSFET
SSM9916H N-Channel Enhancement-Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com SSM9918H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Capable of 2.5V gate drive Low drive current Surface mount package D BV DSS R DS(ON) ID 20V 14mΩ 45A G S Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 20 ± 12 45 20 140 48 0.