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Silicon Power Corporation

C789 Datasheet Preview

C789 Datasheet

Thyristor

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C789
77mm / 6 kV THYRISTOR
Type C789 thyristor is suitable for phase control applications such as HVDC valves, static VAR
compensators and synchronous motor drives.
The silicon junction is manufactured by the proven multi-diffusion process and is supplied in an
industry standard disc-type package, ready to mount to forced or naturally cooled heat dissipators
using commercially available mechanical clamping hardware.
30000
20000
10000
ON-STATE CHARACTERISTIC
Process Maximum @ Tj=115 C
PRINCIPAL RATINGS AND CHARACTERISTICS
Repetitive peak off-
state & reverse volts
Repetitive working
crest voltage
Off-state & reverse
leakage current
Average on-state
current
V
DRM
V
RRM
T =0
J
to 115oC
V T =0
DWM
J
V to 115oC
DRM
I
DWM
I
RWM
T =0
J
to 115oC
I
T(AV)
T=
case
70oC
up to
6000
0.8V
DRM
0.8V
RRM
200
200
1200
V
ma
A
1000
Peak half-cycle
I 60 Hz
TSM
non-rep surge current
50 Hz
On-state voltage
Critical rate of rise
of on-state current
V
TM
di/dt
rep
I =2000A
T
t =8ms
P
T =115oC
J
T =115oC
J
60 Hz
DataSheet4U.com
100
0 1 2 3 4 5 6 7 8 9 10 11 12
V =.67V
d DRM
allowable snubber discharge
93C:C789 3/24/93
On-state Voltage , Vt (volts)
MECHANICAL OUTLINE
J
Critical rate of rise
of off-state voltage
dv/dt T =115oC
J
V =.67V
DCRIT
DRM
Recovery current
I T =115oC
RM J
2A/us
5A/us
minimum snap factor S = 0.3
22.5
20
2.3
75
50
1500
97
161
kA
V
DA/austaShee
A
V/us
A
CL
CL
2 0° ±5 °
D
DataSheet4U.com
A Φ = 4.35 in (110.5 mm)
BΦ=2.88 in (73.2 mm)
D=1.45in (36.8 mm)
Turn-on delay
Turn-off time
Thermal resistance
Externally applied
clamping force
t Vd=.5V
d DRM
5
T 5A/us,-100V
off
600
20V/us to 2000V
us
us
R
thJC
F
.012 c/w
8000-9000 lbs.
35.6-40.0 kN
REPETITIVE PEAK REVERSE
AND OFF-STATE BLOCKING
VOLTAGE
T = 0 to 115oC
J
MODEL
V
V
DRM
RRM
(volts)
(volts)
C789FP
6000
6000
C789ET
5900
5900
C789EN
5800
5800
C789ES
5700
5700
C789EM
5600
5600
C789EE
5500
5500
175 GREAT VALLEY PKWY. MALVERN, PA 19355 USA
93c:
DataSheet 4 U .com
PG: 6.079 7/3/95
--




Silicon Power Corporation

C789 Datasheet Preview

C789 Datasheet

Thyristor

No Preview Available !

www.DataSheet4U.com
FULL CYCLE AVERAGE POWER LOSS
versus
PEAK CURRENT at 50/60 Hz
(plasma spreading and conduction loss)
Pavg (watts)
7000
C789 / SDT219
MAXIMUM PEAK RECOVERY CURRENT
Irm, (A)
200
Tj=115 C
6000
5000
120 deg.sq. wave
overlap angle
= 20 degree
100
4000
3000
2000
1000
180 degree
sinewave
50
20
approximation
2
Irm
Qrr = ----
di/dt
(uC) (A/us)
et4U.com
0
0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000
Peak Current,It (A)
10
.1
93c: 93c:
DataSheet4U.com
1.
Circuit diR/dt, (A/us)
5.
Full Cycle Pow er Loss (w atts)
50/60 Hz, TJ=115oC
IT (peak) Half-sine 3 Phase
(A)
180o
120o
250 115 126
500 244 274
750 389 441
1000
550
628
1250
727
834
1500 919 1060
1750
1127
1304
2000
1350
1568
2250
1589
1850
2500
1842
2152
2750
2110
2471
3000
2394
2810
3500
3006
3542
4000
3678
4348
5000
5197
6178
DataSheet4U.com
DataSheet4 U .com
GATE SUPPLY REQUIREMENTS
Open circuit voltage
40 V
Short circuit current
- rise time
4A
0.5us
Pulse duration (min)
20 us
7/13/95


Part Number C789
Description Thyristor
Maker Silicon Power Corporation
PDF Download

C789 Datasheet PDF






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