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Silicon Power Corporation

C770A Datasheet Preview

C770A Datasheet

Inverter Thyristor

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INVERTER THYRISTOR
SPCO
C770 & C770A
77mm / 1800V / 60-80us
Disc-type ceramic PRESSPAK package
Type C770 reverse blocking thyristor is suitable for inverter applications.The silicon junction
is manufactured by the proven multi-diffusion process and utilizes the exclusive involute gate
structure.It is supplied in an industry accepted disc-type package , ready to mount using
commercially available heat dissipators and mechanical clamping hardware.
C770
ON-STATE CHARACTERISTIC
On-state current , It (amperes)
10000
1000
Process Maximum
Pulsed Current
Initial Tj = 125 degC
100
012345678
On-state Voltage , Vt (volts)
THERMAL IMPEDANCE vs. ON-TIME
Zthj-c (deg C/W)
.02
.01
ww .001
w.D.0001
ataS.00001
h0.1
Rthj-case(dc) =
.012 degC/watt
1
10
100
1000
On-Time (milliseconds)
10000
eet4USILICON POWER CORPORATION
.175 GREAT VALLEY PARKWAY, MALVERN, PA 19355
comUSA
Blocking Voltage Code
C770__
C770A__
MODEL
VDRM/VRRM
-40 to +125 oC
———————————-
C770 PN
1800 Volts
C770 PS
1700
C770 PM
1600
C770 PE
1500
C770 PD
1400
Gate Drive Requirements:
open circuit voltage
internal impedance
rise time of s.s. current
minimum duration
30-40 V
10
0.5 - 1 µs
10 µs
C770
Non-Repetitive Half-Cycle
Peak Surge Current & I2t
Itsm (kA)
100
I2t (amp-sq-sec)
10.E6
50 5.E6
10 1.E6
1 10
Pulse Width - milliseconds
PG: 6.078 sh1 12/1/98




Silicon Power Corporation

C770A Datasheet Preview

C770A Datasheet

Inverter Thyristor

No Preview Available !

SPCO
C770
PARAMETER
LIMITING CHARCTERISTICS
C770
TEST
SYMBOL
CONDITIONS
LIMIT UNITS
Rep. peakrev.
& off-state volts
Reverse & off-
state current
Average on-state
current
VRRM
VDRM
IRRM
IDRM
IT(AV)
Tj = -40 to +125oC up to
1800
Tj = 125oC
100
TCASE = 70oC
2100
V
ma
A
Non-rep. half cycle ITSM
surge current
60 Hz (8.3ms)
50 Hz (10 ms)
38
35
kA
On-state voltage VTM
Critical rate of rise di/dt(rep)
of on-state current
IT = 2000A
special C770A
TCASE = 125oC
Tj=125oC 60Hz
1.55
1.60
300
V
A/us
Critical rate of rise dv/dt
of off-state voltage linear
Recovery current IRM
Tj=125oC 60Hz
VDCRIT=67%VDRM
Tj=125oC
@ 25 A/us
500
200
V/us
A
Turn-on delay
td
VD=67%VDRM
2
us
SELECTED RECOVERY TESTS
Turn-off Time
@ Tj = 125oC
- LEM Thyristometre Type C770
conditions for Tq <= 80us
diRdt = 25 A/us
VR = - 5V
400V/us to 67%VDRM
- Naturally Commutating Circuit
type C770A only
conditions for Tq <= 60us
It = 3000 A
di dt = 60 A/us
R
80 - 100V/us initial
Vd = 1000V
- Naturally Commutating Circuit
type C770A only
conditions : diRdt = 60 A/us
VR-appl'd=350V
snubber R=60C= 1µF
IRM <= 400A QRR <= 2000µC
S = t /t >= 0.33
ba
Thermal resistance RthJ-C
C770 only
.012
ENERGY LOSS PULSE / C770 THYRISTOR
Half sine pulses / No reverse loss
Energy per Pulse (joules)
100
pulse width
(us)
9000
7000
5000
oC/watt
C770 only
ENERGY PER PULSE
Trapezoidal Wave - no reverse voltage
di/dt = 100 A/us
Energy per Pulse (joules)
100
9000
pulse width
(us)
7000 5000
2000
1000
10
750
10
500
250
2000
1000
750
500
250
1
3000
SIGC770A/89C
3500
4000 4500 5000 5500 6000
Peak Current (amperes)
6500
7000
1
3000
C770TR1/91a 2/7/91
3500
4000 4500 5000 5500 6000
Peak Current, It (amperes)
6500
7000
PG:6.078 Sh 2
DATE: 12/1/98


Part Number C770A
Description Inverter Thyristor
Maker Silicon Power Corporation
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C770A Datasheet PDF






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