SVTP209R7NP7 datasheet, mosfet equivalent, Silan Microelectronics

Features and benefits

* 130A, 200V, RDS(on)(typ.)=8.5m@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Extreme dv/dt rated
* 100% avalanche tested
* Pb-fre.

Description

SVTP209R7NP7 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior .

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