SVT1040 datasheet, mosfet equivalent, Silan Microelectronics

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Features and benefits

* 10A, 40V, RDS(on)(typ.)=15m@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability 78 56 2 4 1 1、3. Source 3 2、4. G.

Description

SVT1040SA is an N-channel enhancement mode power MOS field effect transistor which is produced using Trench Mos technology. The improved trench stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resist.

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