4. Gate 1, 2, 3. Source 5, 6; 7, 8. Drain 5678 4 12 3
* 21A, 30V, RDS(on)(typ.)= 4.0m@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Ex.

SVT035R5NSA is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior s.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts