SVSP7N60FE2 datasheet, transistor equivalent, Silan Microelectronics

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Features and benefits

* 7A,600V, RDS(on)(typ.)=0.48@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Enhanced avalanche capability
* Extreme d.

Description

SVSP7N60F(D)E2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, h.

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