SVSP11N65FJD transistor equivalent, 650v super junction mos power transistor.
* 11A,650V, RDS(on)(typ.)=0.33@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt.
SVSP11N65D/F/S/FJD/K/TD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters w.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 408.93KB)