SVS7N60DD2TR transistor equivalent, 600v dp mos power transistor.
* 7A,600V, RDS(on)(typ.)=0.48@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Enhanced avalanche capability
* Extreme d.
SVS7N60F(FJ)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency.
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