* 4A, 650V, RDS(on)(typ)=0.95Ω@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Extreme dv/dt rated
* High peak current c.

SVS4N65F/MJ/D is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with.

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