SVS11N60SD2 transistor equivalent, 600v dp mos power transistor.
* 11A,600V, RDS(on)(typ.)=0.3@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt .
SVS11N60D/F/S/FJ/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high effic.
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