SVGP103R0NP7, SVGP103R0NT Datasheet - Silan Microelectronics

SVGP103R0NP7 100V N-CHANNEL MOSFET

SVGP103R0NT(P7) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely us.

SVGP103R0NP7 Features

* 180A, 100V, RDS(on)(typ.)=2.5m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Extreme dv/dt rated

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant 123 TO-220-3L TO-247-3L FEATURES Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratin

SVGP103R0NT-SilanMicroelectronics.pdf

SVGP103R0NP7 Datasheet Preview — This datasheet PDF includes multiple part numbers: SVGP103R0NP7, SVGP103R0NT. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVGP103R0NP7, SVGP103R0NT

Manufacturer:

Silan Microelectronics

File Size:

400.24 KB

Description:

100v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVGP103R0NP7, SVGP103R0NT.
Please refer to the document for exact specifications by model.

SVGP103R0NP7 Distributor

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SVGP103R0NP7 SVGP103R0NT 100V N-CHANNEL MOSFET Silan Microelectronics