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SVG062R8NL5 - 60V N-CHANNEL MOSFET

Description

SVG062R8NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

Features

  • 140A, 60V, RDS(on)(typ. )=2.4m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 65 87 4 23 1 1 32 4 PDFN-8-5X6X0.95-1.27 KEY.

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Datasheet Details

Part number SVG062R8NL5
Manufacturer Silan Microelectronics
File Size 361.55 KB
Description 60V N-CHANNEL MOSFET
Datasheet download datasheet SVG062R8NL5 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silan Microelectronics SVG062R8NL5_Datasheet 140A, 60V N-CHANNEL MOSFET DESCRIPTION SVG062R8NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. FEATURES  140A, 60V, RDS(on)(typ.)=2.4m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 65 87 4 23 1 1 32 4 PDFN-8-5X6X0.95-1.
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