SVF8N65F Datasheet | Silan Microelectronics

DESCRIPTION SVF8N65T/F is a N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ ∗ ∗ ∗ ∗ 8A, 650V, RDS(on)( typ )= 1.2Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF8N65T SVF8N65F Package TO-220-3L TO-220F-3L Marking SVF8N65T SVF8N65F Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://.silan..cn REV:1.2 2011.12.26 Page 1 of 8 SVF8N65T/F_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) - Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Rating Storage Temperature Rating TC=25°C TC=100°C Symbol VDS VGS ID IDM PD EAS TJ Tstg 150 1.20 398 -55～+150 -55～+150 Ratings SVF8N65T 650 ±30 8.0 5.1 32.0 48 0.38 SVF8N65F Unit V V A A W W/°C m J °C °C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Ratings SVF8N65T 0.83 62.5 SVF8N65F 2.60 120 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol...