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SVF7N80KL - 800V N-CHANNEL MOSFET

Download the SVF7N80KL datasheet PDF. This datasheet also covers the SVF7N80F variant, as both devices belong to the same 800v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

SVF7N80T/F/KL is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 7A,800V,RDS(on)(typ. )=1.39@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVF7N80F-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF7N80KL
Manufacturer Silan Microelectronics
File Size 685.34 KB
Description 800V N-CHANNEL MOSFET
Datasheet download datasheet SVF7N80KL Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVF7N80F 800V N-CHANNEL MOSFET
SVF7N80T 800V N-CHANNEL MOSFET
SVF7N60CD 600V N-CHANNEL MOSFET
SVF7N60CF 600V N-CHANNEL MOSFET
SVF7N60CK 600V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SVF7N80T/F/KL_Datasheet 7A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N80T/F/KL is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  7A,800V,RDS(on)(typ.)=1.39@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.
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