| Description | SVF7N60F/S/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are... |
| Features |
7A, 600V, RDS(on)（typ）=0.96@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
ORDERING INFORMATION
Part No.
SVF7N60F SVF7N60S SVF7N60STR SVF7N60DTR
Package
TO-220F-3L TO-263-2L TO-263-2L TO-252-2L
Marking
SVF7N60F SVF7N60S SVF7N60S SVF7N60D
2
1 13
3 TO-252-2L 1.Gate 2.Drain 3.Source
123 TO-220F-3L
1 3
TO-263...
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| Datasheet |
 SVF7N60S Datasheet - 518.66KB |
