SVF3878AP7 datasheet, mosfet equivalent, Silan Microelectronics

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Features and benefits

* 9A, 900V, RDS(on) (typ.)=1. 0@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability 2. Drain 1. Gate 3. Source 12 3 TO.

Description

SVF3878AP7 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize o.

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